自旋量子比特在SOI CMOS技术中的发展

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626273

B. Bertrand, L. Hutin, L. Bourdet, A. Corna, B. Jadot, H. Bohuslavskvi, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Francerschi, Y. Niquet, M. Vinet

{"title":"自旋量子比特在SOI CMOS技术中的发展","authors":"B. Bertrand, L. Hutin, L. Bourdet, A. Corna, B. Jadot, H. Bohuslavskvi, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Francerschi, Y. Niquet, M. Vinet","doi":"10.1109/NANO.2018.8626273","DOIUrl":null,"url":null,"abstract":"Abst ract We pres ent the rece nt adva nces mad e tow ards the reali zati on of elect ron and hole qua ntu m bit devi ces on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of spin quantum bits in SOI CMOS technology\",\"authors\":\"B. Bertrand, L. Hutin, L. Bourdet, A. Corna, B. Jadot, H. Bohuslavskvi, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Francerschi, Y. Niquet, M. Vinet\",\"doi\":\"10.1109/NANO.2018.8626273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abst ract We pres ent the rece nt adva nces mad e tow ards the reali zati on of elect ron and hole qua ntu m bit devi ces on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed.\",\"PeriodicalId\":425521,\"journal\":{\"name\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2018.8626273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2018.8626273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

摘要介绍了在绝缘体上硅(Silicon-On-Insulator, SOI)技术上实现电子和空穴量子比特器件的最新进展。这种器件是通过稍微修改纳米线晶体管制造的标准工艺流程获得的。综述了近年来在量子比特电气控制方面的研究进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Development of spin quantum bits in SOI CMOS technology

Abst ract We pres ent the rece nt adva nces mad e tow ards the reali zati on of elect ron and hole qua ntu m bit devi ces on a Silicon-On-Insulator (SOI) technology. Such devices are obtained by slightly modifying our standard process flow for nanowire transistor fabrication. Recent developments on electrical control of the qubits are reviewed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

自引率

0.00%

发文量