在v型凹槽和锥体凹槽中模拟InGaAs MOVPE

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-08-04 DOI:10.1109/ICIPRM.2016.7528562

S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi

{"title":"在v型凹槽和锥体凹槽中模拟InGaAs MOVPE","authors":"S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi","doi":"10.1109/ICIPRM.2016.7528562","DOIUrl":null,"url":null,"abstract":"In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling InGaAs MOVPE in V-grooves and pyramidal recesses\",\"authors\":\"S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi\",\"doi\":\"10.1109/ICIPRM.2016.7528562\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528562\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

在这项工作中，我们提出了在非平面v型凹槽和锥体凹槽中InGaAs纳米结构的金属有机气相外延(MOVPE)的建模。我们建立的生长模型首次通过拟合In0.12Ga0.88As v槽量子线生长过程中的形态和成分演变，找到了一组优化的InGaAs外延动力学参数。这些参数也允许再现在金字塔位控制量子点系统中形成的In0.25Ga0.75As纳米结构的生长。最后，由我们的模拟得出的结构的温度依赖性已经与我们研究中先前报道的光学性质进行了比较。

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Modeling InGaAs MOVPE in V-grooves and pyramidal recesses

In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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