{"title":"一种基于FF转换相关性降低捕获功率的不在意填充方法","authors":"Masayoshi Yoshimura, Yoshiyasu Takahashi, Hiroshi Yamazaki, Toshinori Hosokawa","doi":"10.1109/ATS.2015.10","DOIUrl":null,"url":null,"abstract":"High power dissipation can occur by high launch-induced switching activity when the response to a test pattern is captured by flip-flops (FFs) in at-speed scan testing, resulting in excessive IR drop. IR drop may cause significant capture-induced yield loss in the deep-submicron era. It is known that test modification methods using X-identification and X-filling are effective to reduce power dissipation at the capture cycle. Conventional low power dissipation oriented X-filling methods consecutively select FFs and assign values to reduce the number of transitions on FFs. In this paper, we propose a novel low power dissipation oriented X-filling method using SAT solvers thatconducts simultaneous X-filling for some FFs. We also proposed a selection order of FFs based on a correlation coefficient betweentransitions of FFs and power dissipation. Experimental results show that the proposed method was effective for ISCAS'89 and ITC'99 benchmark circuits compared with justification-probability-based fill.","PeriodicalId":256879,"journal":{"name":"2015 IEEE 24th Asian Test Symposium (ATS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Don't Care Filling Method to Reduce Capture Power Based on Correlation of FF Transitions\",\"authors\":\"Masayoshi Yoshimura, Yoshiyasu Takahashi, Hiroshi Yamazaki, Toshinori Hosokawa\",\"doi\":\"10.1109/ATS.2015.10\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power dissipation can occur by high launch-induced switching activity when the response to a test pattern is captured by flip-flops (FFs) in at-speed scan testing, resulting in excessive IR drop. IR drop may cause significant capture-induced yield loss in the deep-submicron era. It is known that test modification methods using X-identification and X-filling are effective to reduce power dissipation at the capture cycle. Conventional low power dissipation oriented X-filling methods consecutively select FFs and assign values to reduce the number of transitions on FFs. In this paper, we propose a novel low power dissipation oriented X-filling method using SAT solvers thatconducts simultaneous X-filling for some FFs. We also proposed a selection order of FFs based on a correlation coefficient betweentransitions of FFs and power dissipation. Experimental results show that the proposed method was effective for ISCAS'89 and ITC'99 benchmark circuits compared with justification-probability-based fill.\",\"PeriodicalId\":256879,\"journal\":{\"name\":\"2015 IEEE 24th Asian Test Symposium (ATS)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 24th Asian Test Symposium (ATS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS.2015.10\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 24th Asian Test Symposium (ATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2015.10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Don't Care Filling Method to Reduce Capture Power Based on Correlation of FF Transitions
High power dissipation can occur by high launch-induced switching activity when the response to a test pattern is captured by flip-flops (FFs) in at-speed scan testing, resulting in excessive IR drop. IR drop may cause significant capture-induced yield loss in the deep-submicron era. It is known that test modification methods using X-identification and X-filling are effective to reduce power dissipation at the capture cycle. Conventional low power dissipation oriented X-filling methods consecutively select FFs and assign values to reduce the number of transitions on FFs. In this paper, we propose a novel low power dissipation oriented X-filling method using SAT solvers thatconducts simultaneous X-filling for some FFs. We also proposed a selection order of FFs based on a correlation coefficient betweentransitions of FFs and power dissipation. Experimental results show that the proposed method was effective for ISCAS'89 and ITC'99 benchmark circuits compared with justification-probability-based fill.