Guowang Li, T. Zimmermann, Yu Cao, Chuanxin Lian, X. Xing, Ronghua Wang, P. Fay, H. Xing, D. Jena
{"title":"新型高铝成分Al0.72Ga0.28N/AlN/GaN hemt的工作功能工程","authors":"Guowang Li, T. Zimmermann, Yu Cao, Chuanxin Lian, X. Xing, Ronghua Wang, P. Fay, H. Xing, D. Jena","doi":"10.1109/DRC.2010.5551983","DOIUrl":null,"url":null,"abstract":"Enormous progress has been made in low Al composition (<40 %) AlGaN/GaN HEMTs for high power and high frequency applications [1]. For scaling down to deep sub-micrometer dimensions, high Al composition AlGaN barrier can offer higher two-dimensional electron gas (2DEG) density and lower sheet resistance than low Al composition AlGaN [2]. Pure AlN barriers cause high contact resistance due to their wide band gap (6.2 eV) [3]. Compared to lattice-matched AlInN barriers, the higher band gap and conduction band offset of high Al composition AlGaN barrier can result in lower gate tunneling current [4]. In this work we report the device characteristics of novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs. By combining ALD technology, threshold voltage control by work-function engineering is demonstrated for the first time.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs\",\"authors\":\"Guowang Li, T. Zimmermann, Yu Cao, Chuanxin Lian, X. Xing, Ronghua Wang, P. Fay, H. Xing, D. Jena\",\"doi\":\"10.1109/DRC.2010.5551983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enormous progress has been made in low Al composition (<40 %) AlGaN/GaN HEMTs for high power and high frequency applications [1]. For scaling down to deep sub-micrometer dimensions, high Al composition AlGaN barrier can offer higher two-dimensional electron gas (2DEG) density and lower sheet resistance than low Al composition AlGaN [2]. Pure AlN barriers cause high contact resistance due to their wide band gap (6.2 eV) [3]. Compared to lattice-matched AlInN barriers, the higher band gap and conduction band offset of high Al composition AlGaN barrier can result in lower gate tunneling current [4]. In this work we report the device characteristics of novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs. By combining ALD technology, threshold voltage control by work-function engineering is demonstrated for the first time.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs
Enormous progress has been made in low Al composition (<40 %) AlGaN/GaN HEMTs for high power and high frequency applications [1]. For scaling down to deep sub-micrometer dimensions, high Al composition AlGaN barrier can offer higher two-dimensional electron gas (2DEG) density and lower sheet resistance than low Al composition AlGaN [2]. Pure AlN barriers cause high contact resistance due to their wide band gap (6.2 eV) [3]. Compared to lattice-matched AlInN barriers, the higher band gap and conduction band offset of high Al composition AlGaN barrier can result in lower gate tunneling current [4]. In this work we report the device characteristics of novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs. By combining ALD technology, threshold voltage control by work-function engineering is demonstrated for the first time.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
