利用共聚焦显微镜和数字图像相关直接测量下填土局部应变

Ying Yang, P. M. Souare, J. Sylvestre
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引用次数: 2

摘要

为了更好地了解微电子封装下充填体裂纹缺陷的起裂情况,预测下充填体的热力学破坏,提出了一种基于共聚焦显微镜的数字图像相关(confocal- dic)方法直接测量下充填体局部应变。为了满足树脂内部共聚焦成像的要求,采用了一种特殊的底填料,由透明环氧树脂和Al2O3颗粒填料组成。在两个结构简单的样品上完成了初步验证:(A)无约束样品用于各向同性膨胀,(b)薄层样品用于玻璃基板上树脂的应变梯度。两种试样的计算结果与热膨胀系数(CTE)计算结果或有限元数值模拟结果吻合较好。此外,我们应用该技术测量了组件在60°C的热载荷下,芯片角落区域的下填土中的应变分布。结果表明,最大应变值恰好出现在切屑转角区域,与仿真结果一致。测得的最大第一主应变约为0.9%,而侧壁应变约为0.5%。由于实际弯角处由于切割效应造成的缺陷,弯角处实测应变低于有限元计算结果。总的来说,测量和计算之间的良好一致性证明了我们测量微电子封装组件中下填充局部应变的方法的准确性。
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Direct Measurements of Underfill Local Strain Using Confocal Microscopy and Digital Image Correlation
In order to better understand the initiation of crack defects and predict the thermo-mechanical failure of underfill in microelectronic packages, a confocal microscopy-based digital image correlation (confocal-DIC) method was developed to measure the underfill local strain directly. A special underfill, consisting of transparent epoxy with Al2O3 particle fillers, was applied to meet the requirement of confocal imaging inside the resin. A preliminary validation was accomplished on two samples with a simple structure: (a) non-constrained sample for isotropic dilatation and (b) a thin-layer sample for strain gradients in the resin on a glass substrate. Results from both samples were in good agreement with the calculation from the coefficient of thermal expansion (CTE) or the numerical simulation from finite element method (FEM). Furthermore, we applied this technique to measure the strain distribution in the underfill at the chip corner area when the assembly was under thermal loading at 60 °C. The results showed that the maximum strain value appeared exactly at the chip corner area, which is consistent to the simulation results. The measured maximum first principle strain reached around 0.9 %, while the strain on the sidewalls was approximately 0.5 %. Due to the imperfections of the real corner resulting from dicing effects, the measured strain at the corner was lower than the FEM result. In general, the good agreement between measurements and calculations demonstrates the accuracy of our methodology for measuring the underfill local strain in microelectronic packaging assemblies.
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