二维材料无结场效应管的亚阈值退化——源极/漏极通过绝缘体的条纹场的影响

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782969

H. Asai, W. Chang, N. Okada, K. Fukuda, T. Irisawa

{"title":"二维材料无结场效应管的亚阈值退化——源极/漏极通过绝缘体的条纹场的影响","authors":"H. Asai, W. Chang, N. Okada, K. Fukuda, T. Irisawa","doi":"10.23919/SNW.2019.8782969","DOIUrl":null,"url":null,"abstract":"We perform Technology computer-aided (TCAD) simulations for 2D material based Junctionless FET (JLFET) and investigate the effect of the fringe-field interaction between the source/drain (S/D) electrodes and the 2D channel. We find that subthreshold slope (SS) gets worse by the fringe-field interaction, and the degradation of the SS becomes serious when the work function difference becomes large. Interestingly, we also find that high drain voltage recovers the degradation of the SS.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subthreshold Degradation of 2D material Junctionless FETs -Impact of Fringe Field from Source/Drain Electrodes through Insulator-\",\"authors\":\"H. Asai, W. Chang, N. Okada, K. Fukuda, T. Irisawa\",\"doi\":\"10.23919/SNW.2019.8782969\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We perform Technology computer-aided (TCAD) simulations for 2D material based Junctionless FET (JLFET) and investigate the effect of the fringe-field interaction between the source/drain (S/D) electrodes and the 2D channel. We find that subthreshold slope (SS) gets worse by the fringe-field interaction, and the degradation of the SS becomes serious when the work function difference becomes large. Interestingly, we also find that high drain voltage recovers the degradation of the SS.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782969\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782969","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们对基于二维材料的无结场效应管(JLFET)进行了技术计算机辅助(TCAD)模拟，并研究了源/漏极(S/D)电极与二维通道之间的条纹场相互作用的影响。研究发现，在条纹场相互作用下，阈下斜率(SS)变差，当功函数差较大时，阈下斜率退化严重。有趣的是，我们还发现高漏极电压可以恢复SS的退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Subthreshold Degradation of 2D material Junctionless FETs -Impact of Fringe Field from Source/Drain Electrodes through Insulator-

We perform Technology computer-aided (TCAD) simulations for 2D material based Junctionless FET (JLFET) and investigate the effect of the fringe-field interaction between the source/drain (S/D) electrodes and the 2D channel. We find that subthreshold slope (SS) gets worse by the fringe-field interaction, and the degradation of the SS becomes serious when the work function difference becomes large. Interestingly, we also find that high drain voltage recovers the degradation of the SS.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量