电子束诱导碳纳米尖在钨硅场致发光材料上生长

2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2023-07-10 DOI:10.1109/IVNC57695.2023.10188960

Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner

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引用次数: 0

摘要

在我们的实验中，我们在钨尖上生长电子发射碳纳米结构。随后，我们将生长过程转移到预结构的掺磷n型硅上，并获得了直接生长在硅上的发射碳纳米结构。纳米结构生长后，硅场发射体在1.1 kV下的发射电流增加到76 nA(生长前相同条件下为6 nA)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters

In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).

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2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)

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