{"title":"基于Gunn二极管的x波段脉冲发生器","authors":"V. P. Pushkarev, V. A. Kochumeev, O. Stukach","doi":"10.1109/IFOST.2012.6357673","DOIUrl":null,"url":null,"abstract":"In the paper, the block diagram and some highlights of transfer microwave radio pulse module based on Gunn diode of 3A768 is considered. Dependences of the diode current and output power on bias voltage are investigated. Characteristics of transmitter are resulted. Output power of 10 Wt in a range of temperatures of ± 50°C is reached.","PeriodicalId":319762,"journal":{"name":"2012 7th International Forum on Strategic Technology (IFOST)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"X-band pulse generator based on Gunn diode\",\"authors\":\"V. P. Pushkarev, V. A. Kochumeev, O. Stukach\",\"doi\":\"10.1109/IFOST.2012.6357673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper, the block diagram and some highlights of transfer microwave radio pulse module based on Gunn diode of 3A768 is considered. Dependences of the diode current and output power on bias voltage are investigated. Characteristics of transmitter are resulted. Output power of 10 Wt in a range of temperatures of ± 50°C is reached.\",\"PeriodicalId\":319762,\"journal\":{\"name\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFOST.2012.6357673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th International Forum on Strategic Technology (IFOST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFOST.2012.6357673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the paper, the block diagram and some highlights of transfer microwave radio pulse module based on Gunn diode of 3A768 is considered. Dependences of the diode current and output power on bias voltage are investigated. Characteristics of transmitter are resulted. Output power of 10 Wt in a range of temperatures of ± 50°C is reached.
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