A. Olivier, N. Wichmann, J. Mo, A. Noudéviwa, Y. Roelens, L. Desplanque, X. Wallart, F. Danneville, G. Dambrine, S. Bollaert, F. Martin, O. Desplats, J. Saint-Martin, M. Shi, Y. Wang, M. Chauvat, P. Ruterana, H. Maher
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Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.
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