一种180nm CMOS高输出功率射频三倍器

2022 Photonics & Electromagnetics Research Symposium (PIERS) Pub Date : 2022-04-25 DOI:10.1109/piers55526.2022.9793019

Xinke Zhao, Leijun Xu

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引用次数: 0

摘要

针对传统三倍器输出功率大、匹配性差的问题，设计了一种三倍器。Balun和无源元件的设计可以在抑制基波甚至谐波的同时实现良好的匹配性能。采用180 nm CMOS技术，3db带宽跨越31.5 GHz ~ 36 GHz，在注入RF信号功率为0 dBm时，输出功率可达7.9 dBm，在1.8 V电源下，三倍器直流功耗为36.9 mW。

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A RF Frequency Tripler with High Output Power in 180nm CMOS

In this paper, a frequency tripler is designed to improve the output power and poor matching of traditional frequency tripler. Balun and passive components are designed for achieve good matching performance while suppressing fundamental wave and even harmonic wave. By using 180 nm CMOS technology, the 3-dB bandwidth spans 31.5 GHz ~ 36 GHz, the output power can be achieved to 7.9 dBm when injecting RF signal power of 0 dBm, the DC power consumption of the tripler is 36.9 mW with the power supply of 1.8 V.

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2022 Photonics & Electromagnetics Research Symposium (PIERS)

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