采用AlGaN/GaN功率HEMT器件的低噪声混合放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964367

Ryan Welch, Tom Jenkins, Bob Neidhard, Lois Kehias, Tony Quach, P. Watson, Rick Worley, Mike Barsky, Randy Sandhu, Mike Wojtowicz

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引用次数: 8

摘要

这项工作报告了在外延材料中展示AlGaN/GaN低噪声放大器(LNAs)的努力，该放大器设计用于构建功率晶体管。混合LNA电路在4ghz时产生的噪声系数为3db，增益为8.5 dB，输入回波损耗为-6.5 dB，输出回波损耗为-9 dB。此外，增强工艺中的器件具有改进的噪声特性和更可实现的匹配条件。这些设备的增强将实现强大的x波段LNA演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

This work reports on efforts to demonstrate AlGaN/GaN Low Noise Amplifiers (LNAs) in epitaxial material designed to build power transistors. The hybrid LNA circuit produced a noise figure of 3 dB, a gain of 8.5 dB, an input return loss of -6.5 dB and an output return loss of -9 dB at 4 GHz. Further, devices in an enhanced process have improved noise characteristics and more realizable match conditions. These device enhancements will enable robust X-band LNA demonstrations.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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