{"title":"13ghz可调谐低噪声GaAs FET振荡器","authors":"P. Brand","doi":"10.1109/EUMA.1983.333281","DOIUrl":null,"url":null,"abstract":"Today GaAs-FETs are able to generate relative high output power at high frequencies and good efficiency. Therefore they displace GUNN- and IMPATT-diodes in many oscillator and amplifier applications. A big disadvantage of oscillating FETs is their high near carrier noise. But in many cases this problem can be solved by using high Q cavities. In this paper the application of FETs in electronic and mechanical tunable low noise oscillators is shown. A comparison between a feedback and a reverse channel oscillator is made. Measurements of realized circuits are presented. Such oscillators have been developed for use in a digital 13 GHz microwave link system with direct FM service channel.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"243 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Tunable Low Noise GaAs FET Oscillators at 13 GHZ\",\"authors\":\"P. Brand\",\"doi\":\"10.1109/EUMA.1983.333281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Today GaAs-FETs are able to generate relative high output power at high frequencies and good efficiency. Therefore they displace GUNN- and IMPATT-diodes in many oscillator and amplifier applications. A big disadvantage of oscillating FETs is their high near carrier noise. But in many cases this problem can be solved by using high Q cavities. In this paper the application of FETs in electronic and mechanical tunable low noise oscillators is shown. A comparison between a feedback and a reverse channel oscillator is made. Measurements of realized circuits are presented. Such oscillators have been developed for use in a digital 13 GHz microwave link system with direct FM service channel.\",\"PeriodicalId\":105436,\"journal\":{\"name\":\"1983 13th European Microwave Conference\",\"volume\":\"243 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1983 13th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1983.333281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1983 13th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1983.333281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Today GaAs-FETs are able to generate relative high output power at high frequencies and good efficiency. Therefore they displace GUNN- and IMPATT-diodes in many oscillator and amplifier applications. A big disadvantage of oscillating FETs is their high near carrier noise. But in many cases this problem can be solved by using high Q cavities. In this paper the application of FETs in electronic and mechanical tunable low noise oscillators is shown. A comparison between a feedback and a reverse channel oscillator is made. Measurements of realized circuits are presented. Such oscillators have been developed for use in a digital 13 GHz microwave link system with direct FM service channel.
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