p+-Si/p-金刚石异质结二极管的高温稳定性

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598364

Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa

{"title":"p+-Si/p-金刚石异质结二极管的高温稳定性","authors":"Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598364","DOIUrl":null,"url":null,"abstract":"The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High temperature stability of p+-Si/p-diamond heterojunction diodes\",\"authors\":\"Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa\",\"doi\":\"10.1109/LTB-3D53950.2021.9598364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.\",\"PeriodicalId\":198318,\"journal\":{\"name\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D53950.2021.9598364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了表面活化键合制备的p+-Si/p-金刚石异质结二极管(hd)的高温电稳定性，并与Al/金刚石肖特基势垒二极管(sdd)进行了比较。我们认为p+-Si/p-金刚石hdd在退火时比金刚石sdd更稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High temperature stability of p+-Si/p-diamond heterojunction diodes

The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

自引率

0.00%

发文量