{"title":"GaN HEMT E/F3功率放大器温度可靠性研究","authors":"Q. Lin, Lining Jia, Haifeng Wu","doi":"10.1109/IWS55252.2022.9977835","DOIUrl":null,"url":null,"abstract":"In order to study the temperature behavior for GaN HEMT E/F3 power amplifier (PA), the series temperature reliability tests are carried out here. The results show that the DC and AC characteristics of this PA have degraded significantly with the rising temperature. Therefore, temperature is an important factor for the GaN HEMT E/F3 PA. In addition, the temperature characteristics of this PA are improved by increasing the substrate doping concentration, selecting the appropriate gate width and designing a reasonable temperature compensation circuit. This research can give an important guidance for the design of the E/F3 power amplifier.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature Reliability Exploration of GaN HEMT E/F3 Power Amplifier\",\"authors\":\"Q. Lin, Lining Jia, Haifeng Wu\",\"doi\":\"10.1109/IWS55252.2022.9977835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to study the temperature behavior for GaN HEMT E/F3 power amplifier (PA), the series temperature reliability tests are carried out here. The results show that the DC and AC characteristics of this PA have degraded significantly with the rising temperature. Therefore, temperature is an important factor for the GaN HEMT E/F3 PA. In addition, the temperature characteristics of this PA are improved by increasing the substrate doping concentration, selecting the appropriate gate width and designing a reasonable temperature compensation circuit. This research can give an important guidance for the design of the E/F3 power amplifier.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977835\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature Reliability Exploration of GaN HEMT E/F3 Power Amplifier
In order to study the temperature behavior for GaN HEMT E/F3 power amplifier (PA), the series temperature reliability tests are carried out here. The results show that the DC and AC characteristics of this PA have degraded significantly with the rising temperature. Therefore, temperature is an important factor for the GaN HEMT E/F3 PA. In addition, the temperature characteristics of this PA are improved by increasing the substrate doping concentration, selecting the appropriate gate width and designing a reasonable temperature compensation circuit. This research can give an important guidance for the design of the E/F3 power amplifier.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
