M. Iwakuni, M. Niori, T. Saito, T. Hamabe, H. Kurihara, K. Jyoshin, M. Mikuni
{"title":"20 GHz珀尔梯冷却低噪声HEMT放大器","authors":"M. Iwakuni, M. Niori, T. Saito, T. Hamabe, H. Kurihara, K. Jyoshin, M. Mikuni","doi":"10.1109/MWSYM.1985.1132036","DOIUrl":null,"url":null,"abstract":"A 20 GHz band 135 K (NF=1.66dB) low-noise HEMT amplifier with 38 dB gain has been developed. This was achieved by extremely low-loss input circuits, accurate device characterization method with a strip line tuner and a compact cooling system. The amplifier is cooled to -55°C by a Peltier-cooling unit which consumes only 60 watts.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 20 GHz Peltier-Cooled Low Noise HEMT Amplifier\",\"authors\":\"M. Iwakuni, M. Niori, T. Saito, T. Hamabe, H. Kurihara, K. Jyoshin, M. Mikuni\",\"doi\":\"10.1109/MWSYM.1985.1132036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 20 GHz band 135 K (NF=1.66dB) low-noise HEMT amplifier with 38 dB gain has been developed. This was achieved by extremely low-loss input circuits, accurate device characterization method with a strip line tuner and a compact cooling system. The amplifier is cooled to -55°C by a Peltier-cooling unit which consumes only 60 watts.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1132036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
摘要
研制了一种20 GHz频段135 K (NF=1.66dB)低噪声、增益38 dB的HEMT放大器。这是通过极低损耗的输入电路,精确的器件表征方法,带线调谐器和紧凑的冷却系统实现的。放大器被冷却到-55°C的珀尔提尔冷却装置,仅消耗60瓦。
A 20 GHz band 135 K (NF=1.66dB) low-noise HEMT amplifier with 38 dB gain has been developed. This was achieved by extremely low-loss input circuits, accurate device characterization method with a strip line tuner and a compact cooling system. The amplifier is cooled to -55°C by a Peltier-cooling unit which consumes only 60 watts.