Xianya Li, C. Chang, Chih-han Hsueh, Zyh-Fu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, Xinqiang Wang, N. Dietz, Guan Yong-jing, Z. Feng
{"title":"InxGai-xN的铟氮k边x射线吸收光谱","authors":"Xianya Li, C. Chang, Chih-han Hsueh, Zyh-Fu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, Xinqiang Wang, N. Dietz, Guan Yong-jing, Z. Feng","doi":"10.1109/ISNE.2016.7543385","DOIUrl":null,"url":null,"abstract":"InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN\",\"authors\":\"Xianya Li, C. Chang, Chih-han Hsueh, Zyh-Fu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, Xinqiang Wang, N. Dietz, Guan Yong-jing, Z. Feng\",\"doi\":\"10.1109/ISNE.2016.7543385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.
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