D. Das-Gupta, P. Townshend, J. Williams, F. R. Mayers, S. Luk, N. Maung
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Electrical properties of ZnSe Langmuir-Blodgett film MIS devices
A typical set of current-voltage characteristics of an Au-GaAs-ZnSe-Au device in the temperature range of -23.5 to 53 degrees C is presented. It is demonstrated that the conduction mechanism in sandwich structures of Au-GaAs-ZnSe-Au is electrode limited, the Schottky barrier being lowered at the interface. This barrier has been observed to be nonideal, possible due to the presence of interface states at the ZnSe surface.<>
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