{"title":"应用TCAD开发一种完全互补的垂直PNP集成电路技术，用于高性能模拟应用","authors":"R. Spetik, S. Kapsia, J. Pjencak","doi":"10.1109/ASDAM.2014.6998698","DOIUrl":null,"url":null,"abstract":"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications\",\"authors\":\"R. Spetik, S. Kapsia, J. Pjencak\",\"doi\":\"10.1109/ASDAM.2014.6998698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998698\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications
Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.
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