高功率密度氮化镓微流控热交换器

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978568

Y. Won, Farzad Houshmand, D. Agonafer, M. Asheghi, K. Goodson

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引用次数: 4

摘要

针对SiC上GaN HEMT技术的高功率密度可以显著提高雷达系统的性能。不断增加的功率将需要改进与传导和对流相关的散热技术。在此，我们探索了基于SiC衬底和SiC或Cu微结构的组合冷却技术，以提高高功率器件的热性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microfluidic Heat Exchangers for High Power Density GaN on SiC

The high power densities targeted for GaN HEMT on SiC technology can dramatically increase the performance of radar systems. The increasing power will require improved heat removal technologies associated with conduction and convection. Here we explore combined cooling technologies based on SiC substrate and SiC or Cu microstructures, which improve the thermal performance of high power devices.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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