基于全摆幅cmos式时钟的低功耗40gbit /s接收电路

T. Toifl, C. Menolfi, P. Buchmann, C. Hagleitner, M. Kossel, T. Morf, J. Weiss, M. Schmatz
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摘要

我们描述了采用65纳米CMOS- soi技术的40 Gbit/s CMOS CDR电路的电路技术,该电路主要采用全波形CMOS电路风格,以最小化功耗和面积。四分之一速率接收器采用相位可编程PLL (P-PLL)架构进行时钟产生和相位跟踪,并实现了基于CMOS SenseAmp锁存器的高速采样器。该电路的芯片面积为0.03mm2,数据速率为40 Gbps,功耗为72m\V。我们详细描述了几个关键组件的实现,即针对高速运行进行了优化的环形VCO,以及采样和解复用阶段。
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A Low-Power 40 Gbit/s Receiver Circuit Based on Full-Swing CMOS-Style Clocking
We describe circuit techniques for a 40 Gbit/s CMOS CDR circuit in 65 nm CMOS-SOI technology, which mostly uses a full-swing CMOS circuit style to minimize power and area. The quarter rate receiver uses a phase-programmable PLL (P-PLL) architecture for clock generation and phase tracking, and implements a high-speed sampler based on CMOS SenseAmp latches. The circuit uses 0.03mm2 of chip area, and consumes 72m\V of power at 40 Gbps data rate. We describe in detail the implementation of several crucial components, i.e. the ring VCO, which was optimized for high-speed operation, and the sampling and demultiplexing stage.
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