{"title":"采用软开关技术的非隔离三电平双向DC-DC变换器","authors":"Yunfeng Xu, Weimin Wu, Jianming Chen, Gang Lu","doi":"10.1109/SPIES55999.2022.10082315","DOIUrl":null,"url":null,"abstract":"With the development of energy storage systems towards high power, high voltage and high switching frequency, the switches need to withstand higher voltage stress and possible high power loss. In this paper, a non-isolated three-level bidirectional DC-DC converter using the metal-oxide-semiconductor field-effect transistor (MOSFET) as the switches is proposed, where an appropriate control strategy is adopted to achieve soft-switching control. As a result of the soft switching technology and small on-resistance MOSFETs, this scheme can improve efficiency and power density significantly, compared with hard-switching topologies using the insulated gate bipolar transistor (IGBT). Simulation results have verified the correctness of the proposed three-level bidirectional converter and the rationality of the control method.","PeriodicalId":412421,"journal":{"name":"2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Non-isolated Three-Level Bidirectional DC-DC Converter with Soft Switching Technique\",\"authors\":\"Yunfeng Xu, Weimin Wu, Jianming Chen, Gang Lu\",\"doi\":\"10.1109/SPIES55999.2022.10082315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the development of energy storage systems towards high power, high voltage and high switching frequency, the switches need to withstand higher voltage stress and possible high power loss. In this paper, a non-isolated three-level bidirectional DC-DC converter using the metal-oxide-semiconductor field-effect transistor (MOSFET) as the switches is proposed, where an appropriate control strategy is adopted to achieve soft-switching control. As a result of the soft switching technology and small on-resistance MOSFETs, this scheme can improve efficiency and power density significantly, compared with hard-switching topologies using the insulated gate bipolar transistor (IGBT). Simulation results have verified the correctness of the proposed three-level bidirectional converter and the rationality of the control method.\",\"PeriodicalId\":412421,\"journal\":{\"name\":\"2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPIES55999.2022.10082315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPIES55999.2022.10082315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Non-isolated Three-Level Bidirectional DC-DC Converter with Soft Switching Technique
With the development of energy storage systems towards high power, high voltage and high switching frequency, the switches need to withstand higher voltage stress and possible high power loss. In this paper, a non-isolated three-level bidirectional DC-DC converter using the metal-oxide-semiconductor field-effect transistor (MOSFET) as the switches is proposed, where an appropriate control strategy is adopted to achieve soft-switching control. As a result of the soft switching technology and small on-resistance MOSFETs, this scheme can improve efficiency and power density significantly, compared with hard-switching topologies using the insulated gate bipolar transistor (IGBT). Simulation results have verified the correctness of the proposed three-level bidirectional converter and the rationality of the control method.
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