用于先进CMOS半导体技术的铝和铜互连的大电流传输线脉冲特性

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670659

S. Voldman, R. Gauthier, D. Reinhart, K. Morrisseau

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引用次数: 29

摘要

本文报道了用传输线脉冲(TLP)测试铝和铜互连中的大电流现象和静电放电(ESD)。临界失效电流密度，J/下临界/，被评估为导线和通孔结构的脉冲宽度的函数。实验结果表明，与铝基互连相比，铜基互连具有更好的ESD稳健性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

High-current phenomena and electrostatic discharge (ESD) in both aluminum and copper interconnects using transmission line pulse (TLP) testing are reported. Critical current density-to-failure, J/sub crit/, is evaluated as a function of pulse width for both wire and via structures. Experimental results demonstrate that copper-based interconnects have superior ESD robustness compared to aluminum-based interconnects.

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1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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