CMOS肖特基二极管微波功率探测器的制造、SPICE建模及应用

Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06) Pub Date : 2006-01-17 DOI:10.1109/DELTA.2006.22

W. Jeon, J. Melngailis, R. Newcomb

{"title":"CMOS肖特基二极管微波功率探测器的制造、SPICE建模及应用","authors":"W. Jeon, J. Melngailis, R. Newcomb","doi":"10.1109/DELTA.2006.22","DOIUrl":null,"url":null,"abstract":"CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.","PeriodicalId":439448,"journal":{"name":"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"CMOS Schottky diode microwave power detector fabrication, SPICE modeling, and applications\",\"authors\":\"W. Jeon, J. Melngailis, R. Newcomb\",\"doi\":\"10.1109/DELTA.2006.22\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.\",\"PeriodicalId\":439448,\"journal\":{\"name\":\"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DELTA.2006.22\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DELTA.2006.22","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用0.35/spl mu/ CMOS工艺制备了具有不同接触面积和几何形状的CMOS肖特基二极管。制备的二极管在直流和射频直接注入下进行了测试。基于实测结果，提出了CMOS肖特基二极管SPICE模型并进行了仿真。提出的SPICE模型用于设计电荷泵电路和低压参考电路。

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CMOS Schottky diode microwave power detector fabrication, SPICE modeling, and applications

CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.

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Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)

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