{"title":"基于离散缺陷分布模型的集成电路可靠性与良率关系","authors":"Tianxu Zhao, Y. Hao, Peijun Ma, Ta-Te Chen","doi":"10.1109/DFTVS.2001.966751","DOIUrl":null,"url":null,"abstract":"Yield and reliability are two important factors affecting the development of semiconductor manufacturing. It is an important problem, how to express the relation between yield and reliability. In this paper, a model of the relation is given between yield and reliability based on a discrete yield model, many factors are considered in this model, such as the line width, the spacing between the lines as well as the distribution of the defect size and so on. Finally, the validity of this model is shown by simulation.","PeriodicalId":187031,"journal":{"name":"Proceedings 2001 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Relation between reliability and yield of ICs based on discrete defect distribution model\",\"authors\":\"Tianxu Zhao, Y. Hao, Peijun Ma, Ta-Te Chen\",\"doi\":\"10.1109/DFTVS.2001.966751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Yield and reliability are two important factors affecting the development of semiconductor manufacturing. It is an important problem, how to express the relation between yield and reliability. In this paper, a model of the relation is given between yield and reliability based on a discrete yield model, many factors are considered in this model, such as the line width, the spacing between the lines as well as the distribution of the defect size and so on. Finally, the validity of this model is shown by simulation.\",\"PeriodicalId\":187031,\"journal\":{\"name\":\"Proceedings 2001 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2001 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFTVS.2001.966751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2001 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFTVS.2001.966751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relation between reliability and yield of ICs based on discrete defect distribution model
Yield and reliability are two important factors affecting the development of semiconductor manufacturing. It is an important problem, how to express the relation between yield and reliability. In this paper, a model of the relation is given between yield and reliability based on a discrete yield model, many factors are considered in this model, such as the line width, the spacing between the lines as well as the distribution of the defect size and so on. Finally, the validity of this model is shown by simulation.
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