高饱和电流InGaAs/InP光电二极管的表征与优化

2007 International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2007-10-15 DOI:10.1109/NUSOD.2007.4349033

H. Pan, Xin Wang, A. Beling, Hao Chen, J. Campbell

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引用次数: 1

摘要

利用商用器件模拟器研究了34 μ m直径InGaAs/InP修饰电荷补偿单行载流子光电二极管(CC MUTCs)的工作和性能。该器件具有0.75 a /W的高响应率和100 mA的饱和电流。仿真结果与实验结果吻合良好。进一步优化光电二极管的参数，使饱和电流最大化。

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Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current

The operation and performance of 34-mum-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100 mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize the saturation current.

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2007 International Conference on Numerical Simulation of Optoelectronic Devices

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