{"title":"硅锗技术在无线手机上的应用:CDMA三模芯片组","authors":"D. Barlas","doi":"10.1109/GAAS.2001.964338","DOIUrl":null,"url":null,"abstract":"SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set\",\"authors\":\"D. Barlas\",\"doi\":\"10.1109/GAAS.2001.964338\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964338\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964338","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
SiGe技术在过去15年中不断发展(Patton et al, 1990;Schuppen et al .， 1995;Kasper et al .， 1993;Schuppen et al, 1998;Barlas et al .， 1999)。在过去的几年中，关于无线应用中基于SiGe的射频设备的利弊和可行性存在很多争论。本文介绍了一种IS 95/98双频三模芯片组的设计、开发和性能，该芯片组采用商用SiGe双极和BiCMOS代工工艺。
Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set
SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.
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