{"title":"采用零偏肖特基二极管的高效率低功率整流器设计","authors":"A. Mabrouki, M. Latrach, Vincent Lorrain","doi":"10.1109/FTFC.2014.6828604","DOIUrl":null,"url":null,"abstract":"In this paper we present the design of high efficiency low power rectifier for microwave energy harvesting. The proposed circuit is based on a voltage booster formed by a voltage doubler type Latour structure. The circuit topology including parasitic elements and microstrip lines has been studied and optimized for high efficiency energy conversion dedicated to low input power operations (below -10 dBm). Measurement results show 21% and 38% RF-DC conversion efficiencies for, respectively, -20 dBm and -10 dBm input power for 10 KΩ resistor load at 850 MHz. Experimental performances of the rectifier are in good agreement with the simulated ones.","PeriodicalId":138166,"journal":{"name":"2014 IEEE Faible Tension Faible Consommation","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"High efficiency low power rectifier design using zero bias schottky diodes\",\"authors\":\"A. Mabrouki, M. Latrach, Vincent Lorrain\",\"doi\":\"10.1109/FTFC.2014.6828604\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present the design of high efficiency low power rectifier for microwave energy harvesting. The proposed circuit is based on a voltage booster formed by a voltage doubler type Latour structure. The circuit topology including parasitic elements and microstrip lines has been studied and optimized for high efficiency energy conversion dedicated to low input power operations (below -10 dBm). Measurement results show 21% and 38% RF-DC conversion efficiencies for, respectively, -20 dBm and -10 dBm input power for 10 KΩ resistor load at 850 MHz. Experimental performances of the rectifier are in good agreement with the simulated ones.\",\"PeriodicalId\":138166,\"journal\":{\"name\":\"2014 IEEE Faible Tension Faible Consommation\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Faible Tension Faible Consommation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FTFC.2014.6828604\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Faible Tension Faible Consommation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FTFC.2014.6828604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High efficiency low power rectifier design using zero bias schottky diodes
In this paper we present the design of high efficiency low power rectifier for microwave energy harvesting. The proposed circuit is based on a voltage booster formed by a voltage doubler type Latour structure. The circuit topology including parasitic elements and microstrip lines has been studied and optimized for high efficiency energy conversion dedicated to low input power operations (below -10 dBm). Measurement results show 21% and 38% RF-DC conversion efficiencies for, respectively, -20 dBm and -10 dBm input power for 10 KΩ resistor load at 850 MHz. Experimental performances of the rectifier are in good agreement with the simulated ones.
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