热载流子和高通道温度对伪晶GaAs毫米波功率HEMT的降解效应

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628261

Y. Chou, G. Li, D. Leung, Z. Wang, Y.C. Chen, R. Lai, C. Wu, R. Kono, P. Liu, J. Scarpulla, D. Streit

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引用次数: 5

摘要

研究了热载流子(HCID)和高通道温度(HCT)对栅极长度分别为0.1 /spl mu/m和0.15 /spl mu/m的毫米波功率HEMT的降解效应。虽然HCID和HCT都能诱导漏极电流减小，但它们的失效机制不同。我们的假设是栅极接触下载流子密度的减少导致I/sub / ds的减少可能是HCID的原因，栅极金属下沉是由HCT引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Degradation effects induced by hot carrier and high channel temperature in pseudomorphic GaAs millimeter wave power HEMT's

Degradation effects by hot carrier (HCID) and high channel temperature (HCT) are investigated for millimeter wave power HEMT's with a gate length of 0.1 /spl mu/m and 0.15 /spl mu/m. While both HCID and HCT induce drain current reduction, they post distinct failure mechanisms. Our hypothesis is that carrier density reduction under the gate contact which results in I/sub ds/ decrease might account for HCID and gate metal sinking is caused by HCT.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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