{"title":"金属-有机气相外延生长高电子迁移率In0.53Ga0.47As/In0.8Ga0.2As复合通道调制掺杂结构","authors":"H. Sugiyama, H. Matsuzaki, H. Yokoyama, T. Enoki","doi":"10.1109/ICIPRM.2010.5516265","DOIUrl":null,"url":null,"abstract":"Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich In<inf>x</inf>Ga<inf>1−x</inf>As on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm<sup>2</sup>/Vs at the sheet carrier concentration (Ns) of 2.1×10<sup>12</sup> cm<sup>−2</sup>, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy\",\"authors\":\"H. Sugiyama, H. Matsuzaki, H. Yokoyama, T. Enoki\",\"doi\":\"10.1109/ICIPRM.2010.5516265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich In<inf>x</inf>Ga<inf>1−x</inf>As on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm<sup>2</sup>/Vs at the sheet carrier concentration (Ns) of 2.1×10<sup>12</sup> cm<sup>−2</sup>, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516265\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy
Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1−xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm2/Vs at the sheet carrier concentration (Ns) of 2.1×1012 cm−2, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.
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