氮化硼带隙能态对导电的影响

V. V. Lopatin, Y.I. Galanov, F. Konusov
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引用次数: 0

摘要

作者介绍了利用调制热激活光谱(MTAS)对PBN(焦石质氮化硼)进行非平衡传导和热激发发光(TSL)研究的结果。在分析结果时,作者使用了TSL光谱和x射线激发发光。为了找到用MTAS技术观测到的带隙中局部能态能级的位置,确定了引起导通的载流子的符号。所使用的技术使观察非均质多晶材料的输运特性和局部能级参数成为可能。
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The effect of energetic states of BN band gap on conduction
The authors present results of investigations of nonequilibrium conduction and thermally stimulated luminescence (TSL) carried out on PBN (pyrolitic boron nitride) using modulated thermally activated spectroscopy (MTAS). In analyzing the results the authors used the TSL spectra and luminescence stimulated by X-ray emission. To find the position of the energetic levels of local energetic states in the bandgap, which were observed with the MTAS technique, the sign of the charge carriers causing conduction was determined. The techniques used made it possible to observe the transport characteristics and the parameters of the local levels in the heterogeneous polycrystalline materials.<>
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