{"title":"氮化硼带隙能态对导电的影响","authors":"V. V. Lopatin, Y.I. Galanov, F. Konusov","doi":"10.1109/ICSD.1989.69175","DOIUrl":null,"url":null,"abstract":"The authors present results of investigations of nonequilibrium conduction and thermally stimulated luminescence (TSL) carried out on PBN (pyrolitic boron nitride) using modulated thermally activated spectroscopy (MTAS). In analyzing the results the authors used the TSL spectra and luminescence stimulated by X-ray emission. To find the position of the energetic levels of local energetic states in the bandgap, which were observed with the MTAS technique, the sign of the charge carriers causing conduction was determined. The techniques used made it possible to observe the transport characteristics and the parameters of the local levels in the heterogeneous polycrystalline materials.<<ETX>>","PeriodicalId":184126,"journal":{"name":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of energetic states of BN band gap on conduction\",\"authors\":\"V. V. Lopatin, Y.I. Galanov, F. Konusov\",\"doi\":\"10.1109/ICSD.1989.69175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present results of investigations of nonequilibrium conduction and thermally stimulated luminescence (TSL) carried out on PBN (pyrolitic boron nitride) using modulated thermally activated spectroscopy (MTAS). In analyzing the results the authors used the TSL spectra and luminescence stimulated by X-ray emission. To find the position of the energetic levels of local energetic states in the bandgap, which were observed with the MTAS technique, the sign of the charge carriers causing conduction was determined. The techniques used made it possible to observe the transport characteristics and the parameters of the local levels in the heterogeneous polycrystalline materials.<<ETX>>\",\"PeriodicalId\":184126,\"journal\":{\"name\":\"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSD.1989.69175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSD.1989.69175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of energetic states of BN band gap on conduction
The authors present results of investigations of nonequilibrium conduction and thermally stimulated luminescence (TSL) carried out on PBN (pyrolitic boron nitride) using modulated thermally activated spectroscopy (MTAS). In analyzing the results the authors used the TSL spectra and luminescence stimulated by X-ray emission. To find the position of the energetic levels of local energetic states in the bandgap, which were observed with the MTAS technique, the sign of the charge carriers causing conduction was determined. The techniques used made it possible to observe the transport characteristics and the parameters of the local levels in the heterogeneous polycrystalline materials.<>