{"title":"InAs/GaAs p-i-p量子点红外光电探测器的光电流优化","authors":"B. Zhang, H. D. Lu, W. Ning, F. Guo","doi":"10.1109/NEMS.2016.7758219","DOIUrl":null,"url":null,"abstract":"The InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were detailedly demonstrated by Apsys software in the paper. The device consists of Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs supper lattice (SL) and InAs quantum dots (QDs) embedded in In<sub>0.15</sub>Ga<sub>0.85</sub>As, which make device has an advantages of low dark current and large photocurrent at room temperature (300K). The dark current and photocurrent of the device with different InAs QDs density and the number of Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs SL is discussed detailedly.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Photocurrent optimize of InAs/GaAs p-i-p quantum dots infrared photodetectors\",\"authors\":\"B. Zhang, H. D. Lu, W. Ning, F. Guo\",\"doi\":\"10.1109/NEMS.2016.7758219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were detailedly demonstrated by Apsys software in the paper. The device consists of Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs supper lattice (SL) and InAs quantum dots (QDs) embedded in In<sub>0.15</sub>Ga<sub>0.85</sub>As, which make device has an advantages of low dark current and large photocurrent at room temperature (300K). The dark current and photocurrent of the device with different InAs QDs density and the number of Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs SL is discussed detailedly.\",\"PeriodicalId\":150449,\"journal\":{\"name\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2016.7758219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2016.7758219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photocurrent optimize of InAs/GaAs p-i-p quantum dots infrared photodetectors
The InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were detailedly demonstrated by Apsys software in the paper. The device consists of Al0.3Ga0.7As/GaAs supper lattice (SL) and InAs quantum dots (QDs) embedded in In0.15Ga0.85As, which make device has an advantages of low dark current and large photocurrent at room temperature (300K). The dark current and photocurrent of the device with different InAs QDs density and the number of Al0.3Ga0.7As/GaAs SL is discussed detailedly.
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