具有选择性再生发射极和宽禁带外源基的GaInP/GaAs HBTs

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI:10.1109/DRC.1994.1009428

S. Fu, S. Park, Y. Hsin, M. Ho, T. Chin, P. Yu, C. Tu, P. Asbeck

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引用次数: 7

摘要

未来III-V型hbt的关键研究需求是减小器件尺寸，同时最小化发射极边缘复合和寄生电容。本文提出了一种基于多外延生长的新型HBT结构，非常适合这种缩放。这是第一个使用选择性生长的GaInP发射体制成的hbt，第一个使用宽带隙GaInP外部基区制成的hbt，第一个使用侧壁间隔片从光刻尺寸减小发射体宽度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base

A key research need for future III-V HBTs is to reduce device dimensions, while minimizing emitter edge recombination and parasitic capacitances. This paper presents a novel HBT structure based on multiple epitaxial growths well suited for such scaling. These are the first HBTs made with selectively grown GaInP emitters, the first made with widebandgap GaInP extrinsic base regions, and the first to use sidewall spacers to reduce emitter width from photolithographic dimensions.

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52nd Annual Device Research Conference

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