形貌变化ZnO纳米结构的合成

A. Dikshit, Kamal, A. Singh, J. Rana, R. Singh, Nillohit Mukhrjee, P. Chakrabarti
{"title":"形貌变化ZnO纳米结构的合成","authors":"A. Dikshit, Kamal, A. Singh, J. Rana, R. Singh, Nillohit Mukhrjee, P. Chakrabarti","doi":"10.1109/DEVIC.2019.8783324","DOIUrl":null,"url":null,"abstract":"Nanostructures of zinc oxide have great potential in optoelectronics as well as in sensing applications. Here, we report the controlled and systematic growth of ZnO nanostructure by hydrothermal and vapor-liquid-solid (VLS) techniques, which can be used in various electronics and optoelectronic devices. The effect of various growth parameters (growth temperature, annealing time, the thickness of seed layer, to name a few) on the morphology of ZnO nanostructures has been studied. Ultra-long nanowires of length more than $300\\mu\\mathrm{m}$ have been synthesized with aspect ratio around 10.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of Morphological-Variant ZnO nanostructures\",\"authors\":\"A. Dikshit, Kamal, A. Singh, J. Rana, R. Singh, Nillohit Mukhrjee, P. Chakrabarti\",\"doi\":\"10.1109/DEVIC.2019.8783324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanostructures of zinc oxide have great potential in optoelectronics as well as in sensing applications. Here, we report the controlled and systematic growth of ZnO nanostructure by hydrothermal and vapor-liquid-solid (VLS) techniques, which can be used in various electronics and optoelectronic devices. The effect of various growth parameters (growth temperature, annealing time, the thickness of seed layer, to name a few) on the morphology of ZnO nanostructures has been studied. Ultra-long nanowires of length more than $300\\\\mu\\\\mathrm{m}$ have been synthesized with aspect ratio around 10.\",\"PeriodicalId\":294095,\"journal\":{\"name\":\"2019 Devices for Integrated Circuit (DevIC)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Devices for Integrated Circuit (DevIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DEVIC.2019.8783324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Devices for Integrated Circuit (DevIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEVIC.2019.8783324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

氧化锌纳米结构在光电子学和传感应用方面具有巨大的潜力。在这里,我们报道了通过水热和蒸汽-液-固(VLS)技术控制和系统地生长ZnO纳米结构,该结构可用于各种电子和光电子器件。研究了不同生长参数(生长温度、退火时间、种子层厚度等)对ZnO纳米结构形貌的影响。已经合成了长度超过$300\mu\ mathm {m}$的超长纳米线,其宽高比约为10。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Synthesis of Morphological-Variant ZnO nanostructures
Nanostructures of zinc oxide have great potential in optoelectronics as well as in sensing applications. Here, we report the controlled and systematic growth of ZnO nanostructure by hydrothermal and vapor-liquid-solid (VLS) techniques, which can be used in various electronics and optoelectronic devices. The effect of various growth parameters (growth temperature, annealing time, the thickness of seed layer, to name a few) on the morphology of ZnO nanostructures has been studied. Ultra-long nanowires of length more than $300\mu\mathrm{m}$ have been synthesized with aspect ratio around 10.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Analytical Drain Current Model of UTBB SOI MOSFET with lateral dual gates to Suppress Short Channel Effect Effect of AlGaN Back Barrier on InAlN/AlN/GaN E-Mode HEMTs Work-function modulated hetero gate charge plasma TFET to enhance the device performance All-optical Walsh-Hadamard code Generation using MZI Performance Analysis of Staggered Heterojunction based SRG TFET biosensor for health IoT application
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1