非易失性存储器建模的现状与展望

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931549

A. Benvenuti, A. Ghetti, A. Mauri, Haijun Liu, C. Mouli

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引用次数: 6

摘要

本文简要讨论了非易失性存储器(NVM)技术在宏观趋势方面的演变及其对工业研发环境中建模活动的影响。文中提到了不同NVM技术的一些困难建模问题的例子，最后对当前的需求和未来的挑战进行了批判性的回顾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Current status and future prospects of non-volatile memory modeling

We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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