二次谐波激光电压成像在时序故障中的应用,再细化技术在有效位错识别中的应用

S. Liu, Kuang Yuan Chao, H. Chou, Wen Sheng Wu
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引用次数: 0

摘要

激光电压成像(LVI)和激光电压探测(LVP)是验证被测器件(DUT)的激光刺激技术,已广泛用于电路调试和各种频率相关故障模式[1][2]。本文利用LVI和LVP技术研究了具有时序失效的扫描链,并通过平面透射电子显微镜(TEM)进一步进行了物理失效分析(PFA),发现了大块硅中的位错。然而,在3D-TEM检查位错深度时,只发现了深度位错,难以解释通道泄漏现象。本文不介绍位错检测的方法。其主要思想是如何区分引起通道泄漏的位错。在这项工作中,我们提出了一种使用EasyLift进行浅层位错检查的再稀释技术[5]。EasyLift系统允许操作人员提取薄片并将其连接到TEM网格,所有这些都在双波束FIB室中进行。由于片层已经附着在TEM网格上,可以重复进行片层再细化和TEM图像采集[6]。使用这种方法可以部分去除体硅的深层位错,然后进行3D-TEM以获得感兴趣目标的实际深度。
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The Application of 2nd Harmonic Laser Voltage Imaging for Timing Failure, Re-Thinning Techniques for Effective Dislocation Identification
Laser voltage imaging (LVI) and laser voltage probing (LVP) are laser stimulation techniques to verify a device under test (DUT) and have been widely used for circuit debugging and various frequency-dependent failure modes [1] [2]. In this paper, a scan chain with timing failure study was demonstrated by using LVI and LVP techniques, and further physical failure analysis (PFA) found dislocations in bulk silicon by plan view transmission electron microscopy (TEM). However, on checking the depth of dislocations by 3D-TEM, only deep dislocations were found, and it was hard to explain the phenomenon of channel leakage.In this paper, it is not to introduce the methods for dislocation inspection. The major idea is how to distinguish the dislocations those would induce channel leakage. In this work, we presented a re-thinning technique for shallow dislocation inspection by using EasyLift [5]. The EasyLift system allowed operators to extract the lamella and attach it to a TEM grid, all within the dual beam FIB chamber. Because the lamella had attached to TEM grid, lamella re-thinning and acquisition of TEM images could be performed repeatedly [6]. Using this method makes it possible to partially remove the deep dislocations from bulk silicon and then perform 3D-TEM to acquire the actual depth of target of interest.
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