Y. Wu, R. Coffie, N. Fichtenbaum, Y. Dora, C. Suh, L. Shen, P. Parikh, U. Mishra
{"title":"电力转换的总氮化镓解决方案","authors":"Y. Wu, R. Coffie, N. Fichtenbaum, Y. Dora, C. Suh, L. Shen, P. Parikh, U. Mishra","doi":"10.1109/DRC.2011.5994505","DOIUrl":null,"url":null,"abstract":"We present the first 600V-class, total GaN solution for electrical power conversion applications. A 220V–400V boost converter using a GaN transistor and a GaN diode with fast & clean hard-switched waveforms has been demonstrated. The conversion efficiency was >99.1% at 100 kHz and >98.2% at 800 kHz.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Total GaN solution to electrical power conversion\",\"authors\":\"Y. Wu, R. Coffie, N. Fichtenbaum, Y. Dora, C. Suh, L. Shen, P. Parikh, U. Mishra\",\"doi\":\"10.1109/DRC.2011.5994505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the first 600V-class, total GaN solution for electrical power conversion applications. A 220V–400V boost converter using a GaN transistor and a GaN diode with fast & clean hard-switched waveforms has been demonstrated. The conversion efficiency was >99.1% at 100 kHz and >98.2% at 800 kHz.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994505\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present the first 600V-class, total GaN solution for electrical power conversion applications. A 220V–400V boost converter using a GaN transistor and a GaN diode with fast & clean hard-switched waveforms has been demonstrated. The conversion efficiency was >99.1% at 100 kHz and >98.2% at 800 kHz.
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