D. Maier, M. Alomari, N. Grandjean, J. Carlin, M. diForte-Poisson, C. Dua, S. Delage, E. Kohn
{"title":"1000°C下的电子学","authors":"D. Maier, M. Alomari, N. Grandjean, J. Carlin, M. diForte-Poisson, C. Dua, S. Delage, E. Kohn","doi":"10.1109/DRC.2011.5994418","DOIUrl":null,"url":null,"abstract":"High temperature electronics is up to now essentially limited to approx. 500 °C by the high temperature properties of the active semiconductor elements mostly based on SiC [1]. Sensing at even higher temperature relies therefore mostly on non-semiconductor components essentially limiting the systems complexities. However in recent years III-Nitride heterostructures, namely lattice matched InAlN/GaN heterostructures, have become an alternative. In an initial proof-of-concept experiment in 2006 [2] 1000 °C operation could be demonstrated for a short period of time.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Towards electronics at 1000 °C\",\"authors\":\"D. Maier, M. Alomari, N. Grandjean, J. Carlin, M. diForte-Poisson, C. Dua, S. Delage, E. Kohn\",\"doi\":\"10.1109/DRC.2011.5994418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High temperature electronics is up to now essentially limited to approx. 500 °C by the high temperature properties of the active semiconductor elements mostly based on SiC [1]. Sensing at even higher temperature relies therefore mostly on non-semiconductor components essentially limiting the systems complexities. However in recent years III-Nitride heterostructures, namely lattice matched InAlN/GaN heterostructures, have become an alternative. In an initial proof-of-concept experiment in 2006 [2] 1000 °C operation could be demonstrated for a short period of time.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High temperature electronics is up to now essentially limited to approx. 500 °C by the high temperature properties of the active semiconductor elements mostly based on SiC [1]. Sensing at even higher temperature relies therefore mostly on non-semiconductor components essentially limiting the systems complexities. However in recent years III-Nitride heterostructures, namely lattice matched InAlN/GaN heterostructures, have become an alternative. In an initial proof-of-concept experiment in 2006 [2] 1000 °C operation could be demonstrated for a short period of time.