mod衍生SrBi2Ta2O9薄膜在电场中结晶的性质

C. Leu, Tzong-Dar Wu, F. Hsu
{"title":"mod衍生SrBi2Ta2O9薄膜在电场中结晶的性质","authors":"C. Leu, Tzong-Dar Wu, F. Hsu","doi":"10.1109/ISAF.2007.4393186","DOIUrl":null,"url":null,"abstract":"SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field\",\"authors\":\"C. Leu, Tzong-Dar Wu, F. Hsu\",\"doi\":\"10.1109/ISAF.2007.4393186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用金属有机分解(MOD)方法在Pt/Ta/SiO2/Si衬底上制备了厚度约200 nm的SrBi2Ta2O9 (SBT)薄膜。对SBT薄膜施加250 kV/cm的高电场,在750℃的炉内气氛退火40 min,无论电场状态如何,都对SBT薄膜的组织和电学性能有一定的影响。在电场作用下,薄膜在铋层状结构(BLS)相中表现出较强的a/b轴优先取向,第二相的比例略高。另外,部分颗粒发育成棒状颗粒。结果表明,电场的作用改善了SBT薄膜的电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field
SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Preparation and Properties of Lithium-doped K0.5Na0.5NbO3 Thin Films by Chemical Solution Deposition Synthesis and Electric Properties of Alminum Substituted Langasite-type La3Nb0.5Ga5.5O14 Single Crystals Microwave Dielectric Properties of Corundum-Structured (Mg4-xMx)(Nb2-yAy)O9 (M=Mn, Co, and Zn, A=Ta and Sb) Ceramics Crystalline Structure and Surface Morphology of the AlN films sputtered on 64°-YX LiNbO3 Dielectric Characterization of Barium strontium titanate (BST) Films Prepared on Cu Substrate By Aerosol Deposited Method
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1