致密多孔低k介电介质中的辐射感应泄漏电流

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904912

R. J. Waskiewicz, Michael J. Mutch, P. Lenahan, S. King

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引用次数: 2

摘要

我们用电检测磁共振(EDMR)和新的零场磁阻测量方法研究了a-SiOC:H薄膜中的泄漏电流。我们通过对电介质进行60Co γ辐射，大大改变了泄漏电流。我们的研究结果强烈地表明，在研究这些材料的输运机制时，一种非常简单的测量方法，即接近零的磁场磁电阻，是一种可靠的物理工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation induced leakage currents in dense and porous low-k dielectrics

We investigate leakage currents in a-SiOC:H thin films with electrically detected magnetic resonance (EDMR) and new zero field magnetoresistance measurements. We substantially change leakage currents by subjecting the dielectrics to 60Co gamma irradiation. Our results strongly suggest the potential of a very simple measurement, near zero field magnetoresistance, as a reliability physics tool in the investigation of transport mechanisms in these materials.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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