用于多芯片模块的薄膜去耦电容器

D. Dimos, S. Lockwood, R. Schwartz, M. S. Rodgers
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引用次数: 20

摘要

基于铁电锆钛酸铅镧(PLZT)薄膜的薄膜去耦电容器正被开发用于高级封装,如多芯片模块。这些薄膜去耦电容器旨在取代某些应用中的多层陶瓷电容器,因为它们可以更充分地集成到封装架构中。由于互连电感的减少,可以实现的集成度的增加将导致封装体积的减少和高速性能的提高。采用金属羧酸盐/醇盐溶液进行自旋镀膜制备PLZT薄膜。这些薄膜具有非常高的介电常数(/spl epsi//spl ges/900),低介电损耗(tan/spl delta//spl ap/0.01),优异的绝缘电阻(/spl rho/ bbb10 /sup 13/ /spl Omega/-cm,在125/spl度/C)和良好的击穿场强(E/sub B//spl ap/900 kV/cm)。对于集成电路应用,PLZT介电介质的厚度小于1 /spl mu/m,这导致了大的电容/面积(8-9 nF/mm/sup 2/)。薄膜的几何形状和加工条件也使这些电容器适合直接集成到集成电路和需要嵌入组件的封装中
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Thin-film decoupling capacitors for multi-chip modules
Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants (/spl epsi//spl ges/900), low dielectric losses (tan/spl delta//spl ap/0.01), excellent insulation resistances (/spl rho/>10/sup 13/ /spl Omega/-cm at 125/spl deg/C), and good breakdown field strengths (E/sub B//spl ap/900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 /spl mu/m thick, which results in a large capacitance/area (8-9 nF/mm/sup 2/). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.<>
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