单片1/spl倍/2 w波段四级低噪声放大器阵列[用于天线和FPA]

D. Lo, G. Dow, S. Chen, H. Wang, T. Ton, K. Tan, B. Allen
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引用次数: 10

摘要

本文报道了一种基于0.1 /spl μ m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT技术的单片1/spl倍/2 w波段4级低噪声放大器阵列,可应用于w波段相控阵天线或焦平面成像阵列。该放大器在77至100 GHz频段内的平均增益为19 dB,在92至96 GHz频段内的噪声系数为5-6 dB。在80到100 GHz范围内,1/spl times/2阵列放大器之间的串扰小于-25 dB。这种高水平集成MMIC的成功演示表明了0.1 /spl mu/m gaas基HEMT技术的成熟,以及为未来低成本和紧凑的毫米波系统提供阵列或多功能芯片高密度单片集成的可行性。
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A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA]
The authors report a monolithic 1/spl times/2 W-band four-stage low noise amplifier array based on 0.1 /spl mu/m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology for applications in W-band phased array antennas or focal plane imaging array. The amplifiers have achieved an average gain of 19 dB over the band from 77 to 100 GHz and a noise figure of 5-6 dB from 92 to 96 GHz. Crosstalk between the amplifiers in the 1/spl times/2 array is less than -25 dB from 80 to 100 GHz. Successful demonstration of this high level integrated MMIC indicates the maturity of 0.1 /spl mu/m GaAs-based HEMT technology and the feasiblity of high density monolithic integration of array or multifunction chips for future low cost and compact millimeter wave systems.<>
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