大外围，高功率假晶hemt

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394436

L. Aucoin, S. Bouthilette, A. Platzker, S. Shanfield, A. Bertrand, W. Hoke, P. Lyman

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引用次数: 17

摘要

作者在2.45 GHz的单颗16.8 mm伪晶高电子迁移率晶体管(PHEMT)器件上同时展示了10w输出功率、13.5 dB增益和63%的功率附加效率。这个结果代表了s波段频率下单个晶体管的最高输出功率。PHEMT器件的功率密度为625 mW/mm，显著高于典型MESFET的400 mW/mm功率密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Large periphery, high power pseudomorphic HEMTs

The authors have simultaneously demonstrated 10 W output power, 13.5 dB gain and 63% power-added efficiency on a single 16.8 mm pseudomorphic high electron mobility transistor (PHEMT) device at 2.45 GHz. This result represents the highest output power from a single transistor at S-band frequencies. The power density exhibited by the PHEMT device was 625 mW/mm which is significantly higher than a typical MESFET power density of 400 mW/mm.<>

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15th Annual GaAs IC Symposium

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