一种新型可调谐湿蚀刻中红外五线AIInGaAsSb结激光器，功率为2.34-2.44 /spl mu/m

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553035

R. Bugge, B. Fimland

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引用次数: 1

摘要

提出并论证了一种新型可调谐中红外激光器的设计方案。该设计涉及一个具有AlInGaAsSb势垒和InGaAsSb阱的新量子阱结构，一个新的快速热退火(RTA)处理步骤和一个新的湿蚀刻波导结设计

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A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m

A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction

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63rd Device Research Conference Digest, 2005. DRC '05.

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