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引用次数: 4

摘要

我们将证明,取向依赖湿化学蚀刻的简单和廉价的过程也可以用于制备更复杂的形状和元素的微技术。通过这种方式,可以应用不寻常的或任何掩膜方向,通过在单步之间改变掩膜或蚀刻剂来进行多步蚀刻工艺,修改蚀刻剂(如添加无机或有机添加剂的蚀刻剂)。对沿掩膜边缘沿不同方向和不同蚀刻剂生长的缓蚀侧壁表面的蚀刻速率、倾斜度和表面质量进行了估计。有了速率的知识,蚀刻过程可以模拟给定的掩膜尺寸和蚀刻条件。
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New and extended possibilities of orientation dependent etching in microtechnics
We will demonstrate that the simple and inexpensive process of orientation dependent wet chemical etching can also be used for the preparation of more complex shapes and elements in microtechnics. In this way it is possible to apply unusual or any mask directions, multi-step etch processes by changing the mask or the etchant between the single steps, modified etchants (like etchants with inorganic or organic additives). The etch rates, the inclinations and the surface qualities of slow etching sidewall faces growing along mask edges in different directions and with different etchants are estimated. With the knowledge of the rates the etching process can be simulated for given mask dimensions and etch conditions.
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