优化光刻工艺,在高形貌晶圆上实现RDL层异质集成

S. Merugu, S. A. Sek, Navab Singh
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引用次数: 1

摘要

这项工作演示了射频微机电系统(RF MEMS)器件的晶圆级薄膜封装(TFE)[1],[2],该器件将触点和焊盘重新布线,以使倒装芯片兼容更小的CMOS芯片。射频MEMS器件是MEMS行业增长的关键市场驱动力。本文阐述了在高形貌RFMEMS晶圆上定义再分布层(RDL)和打开键垫的光刻步骤的优化,以减少RC延迟并匹配键垫位置,从而实现MEMS与ASIC的异构集成。
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Lithography process optimization to realize RDL layers on high topography wafers for heterogeneous integration
This work demonstrates wafer-level thin film encapsulation (TFE) [1], [2] of a radio-frequency microelectromechanical systems (RF MEMS) device with rerouting of contacts and pads for flip-chip compatibility to a much smaller CMOS chip. RF MEMS devices are a key market driver for growth in the MEMS industry. This article enunciates the optimization of lithography steps in defining redistribution layers (RDL) and opening bond pads on high topography RFMEMS wafer to reduce RC delay and match bond pad locations for Heterogeneous integration of MEMS with ASIC.
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