用AlGaAs表面钝化改进的GaAs纳米线太阳能电池

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472395

Y. H. Lee, Z. Li, L. Fu, P. Parkinson, K. Vora, H. Tan, C. Jagadish

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引用次数: 1

摘要

半导体纳米线太阳能电池(NWSCs)因其在高性能太阳能电池中的应用潜力而引起了人们的广泛关注。在这里，我们报告了使用高质量的AlGaAs外壳进行表面钝化来提高GaAs太阳能电池的性能。该器件的开路电压(Voc)为0.70V，短路电流密度(Jsc)为9.79 mA/cm2，填充系数(FF)为0.52，总功率转换效率(η)为4.22%。这项工作为优化NWSCs提供了一条有希望的途径。

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Improved GaAs nanowire solar cells using AlGaAs for surface passivation

Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.

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COMMAD 2012

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