对高度翘曲模具进行减薄和抛光以使其厚度接近一致的工艺:第1部分

Kirk A. Martin
{"title":"对高度翘曲模具进行减薄和抛光以使其厚度接近一致的工艺:第1部分","authors":"Kirk A. Martin","doi":"10.31399/asm.edfa.2022-4.p034","DOIUrl":null,"url":null,"abstract":"\n This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary and discusses the realities of silicon thickness measurements. With careful processing, cleaning, and RST measurements, samples can be reliably processed to a 50 μm thickness with a variation of +/- 2.5 μm across the majority of the die.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part I\",\"authors\":\"Kirk A. Martin\",\"doi\":\"10.31399/asm.edfa.2022-4.p034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary and discusses the realities of silicon thickness measurements. With careful processing, cleaning, and RST measurements, samples can be reliably processed to a 50 μm thickness with a variation of +/- 2.5 μm across the majority of the die.\",\"PeriodicalId\":431761,\"journal\":{\"name\":\"EDFA Technical Articles\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EDFA Technical Articles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.edfa.2022-4.p034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2022-4.p034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文是多部分系列文章中的第一篇,介绍了如何通过使用多点厚度测量校正机械表面轮廓来精细控制剩余硅厚度(RST)。解释了多点厚度测量的必要性,并讨论了硅厚度测量的实际情况。通过仔细的加工、清洁和RST测量,样品可以可靠地加工到50 μm的厚度,大部分模具的变化范围为+/- 2.5 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part I
This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary and discusses the realities of silicon thickness measurements. With careful processing, cleaning, and RST measurements, samples can be reliably processed to a 50 μm thickness with a variation of +/- 2.5 μm across the majority of the die.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part III Four-Dimensional Scanning Transmission Electron Microscopy: Part II, Crystal Orientation and Phase, Short and Medium Range Order, and Electromagnetic Fields The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing Advanced Characterization of Materials Using Atom Probe Tomography Laser-Based Copper Deposition for Semiconductor Debug Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1