电注入、自旋极化、量子阱垂直腔表面发射激光器

M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya
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引用次数: 0

摘要

总之,作者已经证明了在使用铁磁半导体排列空穴自旋的VCSEL中,左右椭圆偏振模式之间的控制切换。实验证明,自旋注入的概念同样适用于半导体激光器和led。自旋输运发生在-0.25 μ m的距离,温度范围从80到105 K。未来的工作将集中在通过设计带有In(Ga)As/GaAs量子点活性区域的自旋vcsel来提高IICP,并结合可在更高温度下工作的自旋校准层
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Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers
In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures
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