M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya
{"title":"电注入、自旋极化、量子阱垂直腔表面发射激光器","authors":"M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya","doi":"10.1109/DRC.2005.1553125","DOIUrl":null,"url":null,"abstract":"In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers\",\"authors\":\"M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya\",\"doi\":\"10.1109/DRC.2005.1553125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers
In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures