{"title":"无电解电容LED驱动器可靠性评估的系统方法","authors":"Bo Sun, Xuejun Fan, W. V. van Driel, Guoqi Zhang","doi":"10.1109/EUROSIME.2016.7463387","DOIUrl":null,"url":null,"abstract":"In this paper, a systematic approach for reliability assessment of electrolytic capacitor-free LED drivers is developed to investigate the failure rate of MOSFETs in the drivers. An original fly-back driver with electrolytic capacitor and two modified electrolytic capacitor-free drivers are studied, and their performances are compared. Due to LED lumen depreciation during operation, current of the MOSFET decreases over time, which cancels out the effect of junction temperature increase. As a result, the junction temperature of MOSFET increase mildly for the case study, but failure rate is accelerated.","PeriodicalId":438097,"journal":{"name":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A systematic approach for reliability assessment of electrolytic capacitor-free LED drivers\",\"authors\":\"Bo Sun, Xuejun Fan, W. V. van Driel, Guoqi Zhang\",\"doi\":\"10.1109/EUROSIME.2016.7463387\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a systematic approach for reliability assessment of electrolytic capacitor-free LED drivers is developed to investigate the failure rate of MOSFETs in the drivers. An original fly-back driver with electrolytic capacitor and two modified electrolytic capacitor-free drivers are studied, and their performances are compared. Due to LED lumen depreciation during operation, current of the MOSFET decreases over time, which cancels out the effect of junction temperature increase. As a result, the junction temperature of MOSFET increase mildly for the case study, but failure rate is accelerated.\",\"PeriodicalId\":438097,\"journal\":{\"name\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2016.7463387\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2016.7463387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A systematic approach for reliability assessment of electrolytic capacitor-free LED drivers
In this paper, a systematic approach for reliability assessment of electrolytic capacitor-free LED drivers is developed to investigate the failure rate of MOSFETs in the drivers. An original fly-back driver with electrolytic capacitor and two modified electrolytic capacitor-free drivers are studied, and their performances are compared. Due to LED lumen depreciation during operation, current of the MOSFET decreases over time, which cancels out the effect of junction temperature increase. As a result, the junction temperature of MOSFET increase mildly for the case study, but failure rate is accelerated.