Ta-Yeh Lin, Shuw-Guann Lin, Yin-Cheng Chang, Chaoping Hsieh, D. Chang
{"title":"宽带亚太赫兹频段siw到siw的叠加跃迁","authors":"Ta-Yeh Lin, Shuw-Guann Lin, Yin-Cheng Chang, Chaoping Hsieh, D. Chang","doi":"10.1109/SPI57109.2023.10145570","DOIUrl":null,"url":null,"abstract":"In this paper, a stacked transition of substrate-integrated waveguide (SIW)-to-SIW using flip-chip assembly technology is designed to connect two integrated passive device (IPD) substrates. A through-hole via structure constructed by through silicon vias (TSVs) of the IPD and gold bumps is appropriately designed to greatly improve the impedance bandwidth and reduce insertion loss. The bandwidth of the stacked transition is from 108.5 to 158 GHz (37.2%), and the de-embedded insertion loss is 0.28 dB at 133 GHz.","PeriodicalId":281134,"journal":{"name":"2023 IEEE 27th Workshop on Signal and Power Integrity (SPI)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Broadband Sub-THz Band Stacked Transition of SIW-to-SIW\",\"authors\":\"Ta-Yeh Lin, Shuw-Guann Lin, Yin-Cheng Chang, Chaoping Hsieh, D. Chang\",\"doi\":\"10.1109/SPI57109.2023.10145570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a stacked transition of substrate-integrated waveguide (SIW)-to-SIW using flip-chip assembly technology is designed to connect two integrated passive device (IPD) substrates. A through-hole via structure constructed by through silicon vias (TSVs) of the IPD and gold bumps is appropriately designed to greatly improve the impedance bandwidth and reduce insertion loss. The bandwidth of the stacked transition is from 108.5 to 158 GHz (37.2%), and the de-embedded insertion loss is 0.28 dB at 133 GHz.\",\"PeriodicalId\":281134,\"journal\":{\"name\":\"2023 IEEE 27th Workshop on Signal and Power Integrity (SPI)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 27th Workshop on Signal and Power Integrity (SPI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI57109.2023.10145570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 27th Workshop on Signal and Power Integrity (SPI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI57109.2023.10145570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband Sub-THz Band Stacked Transition of SIW-to-SIW
In this paper, a stacked transition of substrate-integrated waveguide (SIW)-to-SIW using flip-chip assembly technology is designed to connect two integrated passive device (IPD) substrates. A through-hole via structure constructed by through silicon vias (TSVs) of the IPD and gold bumps is appropriately designed to greatly improve the impedance bandwidth and reduce insertion loss. The bandwidth of the stacked transition is from 108.5 to 158 GHz (37.2%), and the de-embedded insertion loss is 0.28 dB at 133 GHz.
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